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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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By utilizing InfiniBand routers, InfiniBand Long Distance Connectivity (NVIDIA MetroX®-2), and InfiniBand to Ethernet gateway systems (NVIDIA Skyway™), InfiniBand systems can deliver exceptional scalability and subnet isolation capabilities. When needed, the latter can efficiently and scalably connect high-performance, low-latency InfiniBand data centers to external Ethernet infrastructure, such as Ethernet storage.
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Shenzhen Saiteng Electronics Debuts at CDCE2024 | New Breakthrough in Data Center and Cloud Computing Field
Shenzhen Saiteng Electronics Co., Ltd. made a wonderful appearance at the CDCE2024 International Data Center and Cloud Computing Industry Exhibition, focusing on computing power and data center solutions. The highlights of the exhibition include the display of enterprise level server components, participation in technical forums, and multi-party cooperation negotiations. Explore cutting-edge technology and unlock the future of cloud computing!
We sincerely invite you to attend the 2024 CDCE Data Center and Cloud Computing Industry Exhibition to help the new generation of intelligent computing centers build an AI era innovation platform.
As an annual industry event, CDCE2024 International Data Center and Cloud Computing Exhibition will not only showcase full industry chain technologies and products such as computing power centers, new data center infrastructure, ICT equipment, liquid cooling, cloud computing, network information security, and the Internet of Things, but also bring a series of exciting forums to present a visual feast covering the entire data center industry chain.

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Back Home Product Center Memory Module or RAM (Random Access Memory) UDIMM

M323R1GB4BB0-CQK

M323R1GB4BB0-CQK Samsung DDR5-UDIMM-8GB-1R x 16-4800 Mbps 1.1 V-288- (1G x 16) x 4

Key Features

The model of this memory module is M323R1GB4BB0-CQK, which is a DDR5 standard UDIMM 8GB memory module launched by Samsung. This memory module adopts a 1R x 16 storage architecture and supports a transfer rate of up to 4800 Mbps. The voltage is 1.1 V, with a total of 288 pins and an internal structure of 4 1G x 16 storage chips. This memory module has excellent performance and is suitable for systems that require high-speed data processing capabilities.

Datasheet:

Overview
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Samsung DDR5-UDIMM-8GB-1R x 16-4800 Mbps 1.1 V-288- (1G x 16) x 4 is a high-performance memory module that adopts the new DDR5 memory standard, providing users with better performance and efficient data transfer speed.

This memory module adopts a 1R x 16 memory particle layout, with each memory particle having a capacity of 1GB x 16. It is equipped with a total of 4 memory particles, with a total capacity of 8GB. It adopts a 288 pin UDIMM interface and is compatible with most motherboards. Compared with traditional DDR4 memory, it has faster data transfer speed and better energy efficiency ratio.

In terms of data transfer speed, the Samsung DDR5 memory module provides a data transfer speed of up to 4800 Mbps, which is nearly twice faster than traditional DDR4 memory modules. At the same time, it also adopts a lower 1.1V voltage, effectively reducing power consumption, improving the energy efficiency ratio of the system, and further enhancing system performance. It also supports ECC error correction codes and has high reliability and stability, providing users with safer and more reliable data storage and transmission.

In addition, the Samsung DDR5 memory module also adopts advanced scale and process solutions, such as 10 nanometer level process technology and 16Gb particle capacity, which can further improve transmission speed and efficiency. It also has high compatibility, making it easy for users to quickly install and use.

In summary, the Samsung DDR5-UDIMM-8GB-1R x 16-4800 Mbps 1.1 V-288- (1G x 16) x 4 memory module is a high-speed, efficient, stable, reliable, and compatible memory module that provides users with excellent system performance and excellent cost-effectiveness. It is a product worth choosing from.