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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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2025 Holiday notice: According to the national statutory holiday regulations, our company will welcome a brief period of joy, celebration, and rest
Holiday notice: According to the national statutory holiday regulations, our company will welcome a brief period of joy, celebration, and rest
2025 May the new year bring you new opportunities and happiness.
Happy New Year 2025 May the new year bring you new opportunities and happiness.

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Back Home Product Center Memory Module or RAM (Random Access Memory) ECC DIMM

M324R4GA3BB0-CQK

M324R4GA3BB0-CQK, Samsung DDR5, ECCUDIMM, 32GB, 2Rx84800Mbps, 1.1V, 288 (4Gx8) x20

Key Features

Capacity: 32GB, suitable for large memory requirements of High-performance computing and game applications.
Architecture: ECCUDIMM, which can detect and correct errors in memory, improving system stability.
Speed: 4800Mbps, with high transmission speed and response speed, which can meet the needs of High-performance computing and game applications.
Voltage: 1.1V, low voltage design can reduce power consumption and improve the service life of memory modules.
Storage chip: Adopting a design of 288 (4Gx8) x20 to improve the stability and reliability of memory modules.

Datasheet:

Overview
Specifications
Download
Driver
Relative Products

The Samsung M324R4GA3BB0-CQK DDR5 ECC UDIMM memory module is a high-performance memory module in the computer industry. Due to its powerful performance and advanced technical indicators, it has been highly praised in the market.
Firstly, the Samsung M324R4GA3BB0-CQK DDR5 ECC UDIMM memory module adopts high-speed DDR5 technology, which has faster data transfer speed and lower power consumption compared to DDR4. Moreover, this memory module can also meet high capacity and high-speed performance requirements, as it has a capacity of 32GB and a high-speed rate of 4800Mbps, allowing users to play games, edit videos, and work more smoothly.
Secondly, the Samsung M324R4GA3BB0-CQK DDR5 ECC UDIMM memory module adopts a 2Rx8 architecture, which has higher bandwidth and lower latency. At the same time, the operating voltage is only 1.1V, with lower power consumption and shorter restart time, making the computer more stable and reliable, reducing the possibility of crashes and data loss.
Finally, the Samsung M324R4GA3BB0-CQK DDR5 ECC UDIMM memory module has high compatibility and uses standard 288 slots, making it compatible with most mainstream motherboards for easy installation and use.
In summary, the Samsung M324R4GA3BB0-CQK DDR5 ECC UDIMM memory module is a high-performance, reliable, high-speed, high-capacity, low-voltage, and highly compatible memory module.

Specifications	Detailed Information
Product Name	Samsung M324R4GA3BB0-CQK
DDR Type	DDR5
Memory Capacity	32GB
Architecture	2Rx8
Rate	4800Mbps
Voltage	1.1V
Slot Type	288 (4Gx8) x20
Compatibility	Supports mainstream motherboards