M426R2GA3BB0-CQK
M426R2GA3BB0-CQK, Samsung DDR5, ECCSODIMM, 16GB, 1Rx84800Mbps, 1.1V, 262, (2Gx8) x10
Key Features
Efficient performance: Samsung DDR5 memory module M426R2GA3BB0-CQK adopts ECCSODIMM technology, which can provide 16GB of high memory capacity and speed up to 4800Mbps, meeting the needs of High-performance computing. Single voltage design: The M426R2GA3BB0-CQK memory module only requires a low voltage power supply of 1.1V, which is not only energy-saving and environmentally friendly, but also effectively reduces heat generation, improving the stability and reliability of the entire machine. Efficient data transmission: With a high-density memory capacity of 16GB, the M426R2GA3BB0-CQK memory module has more storage space and can support more data transmission operations, effectively improving computational efficiency. Advanced manufacturing technology: Samsung uses the latest 8nm FinFET process to manufacture this DDR5 memory module, making it highly reliable and ultra-low latency. Double sided heat sink design: This memory module adopts a double sided heat sink design, effectively reducing the operating temperature of the memory module, improving its stability, and extending its service life.
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