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Back Home Product Center Memory Module or RAM (Random Access Memory) ECC DIMM
  • Samsung DDR5 memory module, M426R2GA3BB0-CQK, 16GBECCSODIMM memory, 4800Mbps speed, 1.1V low voltage, high-density memory chip.
  • Samsung DDR5 memory module, M426R2GA3BB0-CQK, 16GBECCSODIMM memory, 4800Mbps speed, 1.1V low voltage, high-density memory chip.

M426R2GA3BB0-CQK

M426R2GA3BB0-CQK, Samsung DDR5, ECCSODIMM, 16GB, 1Rx84800Mbps, 1.1V, 262, (2Gx8) x10
Key Features
Efficient performance: Samsung DDR5 memory module M426R2GA3BB0-CQK adopts ECCSODIMM technology, which can provide 16GB of high memory capacity and speed up to 4800Mbps, meeting the needs of High-performance computing. Single voltage design: The M426R2GA3BB0-CQK memory module only requires a low voltage power supply of 1.1V, which is not only energy-saving and environmentally friendly, but also effectively reduces heat generation, improving the stability and reliability of the entire machine. Efficient data transmission: With a high-density memory capacity of 16GB, the M426R2GA3BB0-CQK memory module has more storage space and can support more data transmission operations, effectively improving computational efficiency. Advanced manufacturing technology: Samsung uses the latest 8nm FinFET process to manufacture this DDR5 memory module, making it highly reliable and ultra-low latency. Double sided heat sink design: This memory module adopts a double sided heat sink design, effectively reducing the operating temperature of the memory module, improving its stability, and extending its service life.

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The Samsung DDR5 memory module M426R2GA3BB0-CQK adopts advanced ECCSODIMM technology, which can provide a high memory capacity of 16GB and an ultra fast speed of up to 4800Mbps, providing users with an excellent computing experience. This memory module also has a single voltage design, which not only saves energy and is environmentally friendly, but also effectively reduces heat generation, improving the stability and reliability of the entire machine. The M426R2GA3BB0-CQK memory module supports advanced double-sided heat sink design, effectively reducing the operating temperature of the memory module, improving its stability, and extending its service life. In addition, Samsung uses the latest 8nm FinFET process to manufacture this DDR5 memory module, making it highly reliable and ultra-low latency, and able to meet the different High-performance computing needs of users.
Specifications Detailed Information
Brand Samsung
Product Model M426R2GA3BB0-CQK
Memory Capacity 16GB
Memory Type DDR5
Interface Type ECCSODIMM
Working Voltage 1.1V
Memory Frequency 4800Mbps
Number of Particles (2Gx8) x 10
Release Date 2023
Size 13.5mm x 30mm x 2.5mm (DDR4 size)
Warranty Period Lifelong
Heat Sink Design Double Sided Heat Sink
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