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Samsung releases Gen5 SSD: Performance uation and application advantages of two PM1743 and PM9D3a models

With the rapid development of big data, cloud computing, and 5G technology, the demand for data computing and efficient storage is constantly increasing. As a leading global supplier of storage device technology, Samsung has officially released the PM9D3a solid-state drive. As a cutting-edge PCIe Gen5.0 NVMe SSD, the PM9D3a provides unparalleled performance and energy efficiency for enterprise servers and multi-core processing data systems. With Samsung's eighth generation 3D V-NAND technology, the PM9D3a can achieve sequential read and write speeds of 12000MB/s and 6800MB/s, respectively. Its capacity of up to 15.36TB and diverse specification options ensure that it can meet the storage needs of various data centers. The new generation PM9D3a not only improves performance, but also helps data centers reduce operating costs and effectively address environmental challenges through improved heat dissipation and power efficiency design. This SSD is an ideal choice for adapting to AI, machine learning, and large-scale data processing, ushering in a new era of data storage.

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Back Home Product Center Memory Module or RAM (Random Access Memory) ECC DIMM

M426R4GA3BB0-CQK

M426R4GA3BB0-CQK, Samsung DDR5, ECCSODIMM, 32GB, 2Rx84800Mbps, 1.1V, 262 (4Gx8) x20

Key Features

M426R4GA3BB0-CQK is a DDR5 memory module produced by Samsung, with a memory capacity of 32GB. It uses ECCSODIMM interface and a 2Rx8 architecture, providing data transfer speeds of up to 4800Mbps. In addition, the voltage of the memory module is only 1.1V and is equipped with a double-sided heat sink design, which can ensure stable and efficient performance. It uses 262 (4Gx8) x20 chips to provide computers with higher peak performance and better scalability, and can meet the needs of most high-performance computers.

Datasheet:

Overview
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Relative Products

M426R4GA3BB0-CQK is currently one of the most advanced DDR5 memory on the market. With a huge memory capacity of 32GB and high-speed data transmission of 4800Mbps, it can greatly improve the running speed and overall work efficiency of the computer, reduce waiting time, and improve work efficiency. At the same time, this memory module adopts a low voltage design of 1.1V, which can save electricity and extend the service life of the device, making significant contributions to energy conservation and environmental protection. The double-sided heat sink design can effectively ensure stable memory operation and prevent performance degradation and system crashes caused by overheating. In addition, the memory module uses a combination of 262 high-quality chips, which is designed to ensure larger computing capacity, less error prone, and good compatibility. It is suitable for scenarios such as high-performance computers and servers, especially for working environments requiring large-scale data processing and high load computing.

Brand/Model	Samsung M426R4GA3BB0-CQK
Type	DDR5
Capacity	32GB
Transfer Speed	4800Mbps
Voltage	1.1V
Pin Count	288
Number of Chips per Module	262
Chip Size	Not specified
Heat Sink Design	Dual-sided heat sink
Compatibility	High-performance computers and servers
Energy Efficiency	Low voltage design, power-saving
Application Scenarios	Large-scale data processing, high-load computing environments