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Back Home Product Center Memory Module or RAM (Random Access Memory) ECC DIMM
  • Samsung M474A4G43AB1-CVF, DDR4, ECC-SODIMM, 32GB, 2R x 82933-Mbps, 1.2V, 260, (2Gx8) x18
  • Samsung M474A4G43AB1-CVF, DDR4, ECC-SODIMM, 32GB, 2R x 82933-Mbps, 1.2V, 260, (2Gx8) x18

M474A4G43AB1-CVF

M474A4G43AB1-CVF, Samsung DDR4, ECC-SODIMM, 32 GB, 2R x 82933-Mbps, 1.2 V, 260, (2Gx8) x18
Key Features
Samsung's latest M474A4G43AB1-CVF DDR4 memory module is a high-performance memory solution that uses ECC-SODIMM design to provide stable and reliable memory support. The memory module has a capacity of 32GB, has a 2Rx8 memory structure, supports a transmission speed of 2933Mbps, and a voltage value of 1.2V, making your computer consume less power and save more electricity when in use. In addition, the memory module adopts a 260 pin design, which is compatible with more types of computers and supports more complex computing tasks, greatly improving work efficiency. The memory granule adopts a design of (2Gx8) x18, greatly improving the processing and transmission speed of data, and providing protection for the user experience.

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The Samsung M474A4G43AB1-CVF DDR4 memory module is a high-performance memory solution suitable for various computer or server application scenarios. This memory module adopts ECC-SODIMM design, which can provide more stable and reliable memory support, making your device run smoother< Br/>


As a high-end memory module, the M474A4G43AB1-CVF has a capacity of 32GB and a memory structure of 2Rx8, supporting a transfer speed of 2933Mbps, allowing your computer to maintain smoothness and better compression performance when processing large amounts of data. At the same time, the voltage value is only 1.2V, which is lower in power consumption compared to other high-performance memory modules, making the machine more energy-efficient and greatly improving its service life< Br/>


The memory module adopts a 260 pin design, which has better compatibility and can support more complex computing tasks, improving work efficiency to a new level. In terms of memory granularity, the (2Gx8) x18 design has been used, greatly improving data processing speed and transmission speed, greatly improving the performance of the memory module and providing protection for the user experience< Br/>


In addition to high performance, the Samsung M474A4G43AB1-CVF DDR4 memory module also adopts advanced heat dissipation technology, effectively reducing the heat generation of the memory module, improving the stability of the entire system, alleviating the problem of memory overheating, and making use more reassuring< Br/>


Finally, the Samsung M474A4G43AB1-CVF DDR4 memory module has detailed specifications, with the trademark SAMSUNG and model M474A4G43AB1-CVF. The specific specifications are 32GB of storage space, the memory structure is 2Rx8, the transmission speed is 2933 Mbps, the voltage is 1.2 V, the interface type is 260 pins, and the memory particles are designed in a (2Gx8) x18 format. As a high-performance memory module, the Samsung M474A4G43AB1-CVF DDR4 memory module can meet the different requirements of different users for computer performance and space requirements, making it the preferred brand for you to choose computer memory modules.
Parameter Specifications
Brand Samsung
Model M474A4G43AB1-CVF
Type DDR4 ECC SODIMM
Capacity 32GB
Architecture 2R x 8
Transmission Speed 2933Mbps
Voltage 1.2V
Interface 260
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