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Back Home Product Center Memory Module or RAM (Random Access Memory) LRDIMM
  • M386ABG40M51-CAE, Samsung memory module, DDR4, LRDIMM, 256GB, 8Rx43200Mbps, low power consumption, high capacity, 4H3DS16Gx4288 pin, high bandwidth
  • M386ABG40M51-CAE, Samsung memory module, DDR4, LRDIMM, 256GB, 8Rx43200Mbps, low power consumption, high capacity, 4H3DS16Gx4288 pin, high bandwidth

M386ABG40M51-CAE

M386ABG40M51-CAE, Samsung DDR4, LRDIMM, 256GB, 8Rx43200Mbps1.2V, 288 (4H3DS16Gx4) x36
Key Features
This memory module is known for its high capacity and speed, adopting an 8Rx4 architecture and a speed of 3200 Mbps, which can process large data and high-load applications faster. At the same time, the M386ABG40M51-CAE also adopts a low-voltage design, which can reduce energy consumption, reduce heat generation, and also increase battery life when used. The combination of the 288 pin and 4H3DS16Gx4 architecture of this memory module provides higher stability and reliability, as well as lower signal noise and higher bandwidth.

Datasheet: 

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General Information:
Manufacturer: SAMSUNG
Manufacturer Part Number: M386ABG40M51-CAE
Product Name: 256gb Ddr4 Sdram Memory Module

Technical Information:
Storage Capacity: 256gb
Memory Technology: Ddr4 Sdram
Number Of Modules: 1 X 256gb
Bus Speed: 3200mhz Ddr4-25600/pc4-3200v
Data Integrity Check: Ecc
Signal Processing: Registered
Cas Latency Timings: Cl22
Rank Features: 8rx4

Physical Characteristics:
Form Factor: 288-pin Lrdimm
Shipping Dimensions: 1.00 (height) X 6.75 (depth)
Shipping Weight: 0.20 Lb
Model
Brand SAMSUNG
Series Server Memory
Model M386ABG40M51-CAE
Details
Capacity 256GB
Type 288-Pin DDR4 SDRAM
Speed  DDR4 3200 (PC4 25600)
CAS Latency  22
Voltage  1.2 V
ECC  YES
Buffered/Registered  Load Reduced
Rank 8Rx4
Chipset Samsung Chipset
Additional Information
Date First Available October 27, 2022
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