M386ABG40M51-CAE
M386ABG40M51-CAE, Samsung DDR4, LRDIMM, 256GB, 8Rx43200Mbps1.2V, 288 (4H3DS16Gx4) x36
Key Features
This memory module is known for its high capacity and speed, adopting an 8Rx4 architecture and a speed of 3200 Mbps, which can process large data and high-load applications faster. At the same time, the M386ABG40M51-CAE also adopts a low-voltage design, which can reduce energy consumption, reduce heat generation, and also increase battery life when used. The combination of the 288 pin and 4H3DS16Gx4 architecture of this memory module provides higher stability and reliability, as well as lower signal noise and higher bandwidth.
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