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Back Home Product Center Solid State Drive (SSD) M.2
  • Samsung PM9A3, MZ1L21T9HCLS-00A07,1.92TB, NVME Solid-state drive, SSD, high-speed transmission, PT certification.
  • Samsung PM9A3, MZ1L21T9HCLS-00A07,1.92TB, NVME Solid-state drive, SSD, high-speed transmission, PT certification.

MZ1L21T9HCLS-00A07

Samsung MZ1L21T9HCLS-00A07 PM9A3 1.92TB M.2 22110 NVME Solid-state drive
Key Features
Samsung PM9A3 Solid-state drive SSD is an advanced Solid-state drive, which has the characteristics of high-speed read and write, large capacity storage and strong reliability. It adopts the M.2 22110 interface and NVME protocol, which can achieve extremely high read performance during testing, greatly improving the system's response speed and operational efficiency. In addition, the Solid-state drive also has 960GB of storage space, which can store a large amount of data and files, and is suitable for data center, enterprise server and other scenarios. Samsung Solid-state drive is an efficient and reliable Solid-state drive, which is suitable for High-performance computing, cloud computing, virtualization and other scenarios.

Datasheet: 

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Samsung PM9A3 M.2 22110 NVMe Solid-state drive is a high-speed and efficient storage device, which is suitable for scenes requiring rapid reading and writing of large amounts of data, such as data center, cloud computing, artificial intelligence, virtualization, High-performance computing and other fields.
The Solid-state drive adopts the V-NAND technology and NVMe interface independently developed by Samsung, which can provide extremely fast response speed and data transmission rate, and has high stability and reliability. It is an ideal solution to achieve High-performance computing and data acceleration.

1、 Performance parameters
PM9A3 M.2 22110 NVMe Solid-state drive adopts PCIe Gen4 interface, which has excellent read/write speed and IOPS performance, and can meet the task with extremely high data transmission speed requirements.
1. Reading and writing speed:
The sequential read and write performance of the Solid-state drive reached 7000MB/s and 5000MB/s respectively, while the random read and write IOPS performance reached 1 million and 1.9 million respectively.
2. Capacity:
PM9A3 M.2 22110 NVMe Solid-state drive provides a variety of capacity options: 1TB, 2TB, 4TB, 8TB, suitable for different application scenarios and needs.
3. Durability:
The Solid-state drive adopts V-NAND 3bit MLC flash memory independently developed by Samsung, which can achieve durability of up to 1200TBW, and has excellent energy consumption control and temperature management functions.

2、 Applicable scenarios
PM9A3 M.2 22110 NVMe Solid-state drive is applicable to a variety of application scenarios and requirements, such as:
1. Data center:
PM9A3 M.2 22110 NVMe Solid-state drive supports the NVMe SSD architecture of multiple namespaces, which can meet the data center's requirements for high-speed storage and low latency, especially in the fields of Big data analysis and machine learning.
2. Cloud computing:
PM9A3 M.2 22110 NVMe Solid-state drive can support cloud computing services with high availability and reliability, and help improve user experience and service quality by improving data transmission speed and stability.
3. Artificial intelligence:
PM9A3 M.2 22110 NVMe Solid-state drive supports large-scale artificial intelligence applications, can quickly read and write large amounts of data, and helps improve the speed and accuracy of model training and reasoning.
4. Virtualization:
PM9A3 M.2 22110 NVMe Solid-state drive can support a virtualized environment and help improve the stability and responsiveness of virtual machines by improving storage capacity and performance.
5. High-performance computing:
PM9A3 M.2 22110 NVMe Solid-state drive has extremely high IOPS and storage throughput, can support High-performance computing and GPU acceleration, and has broad application prospects in scientific computing, simulation, machine vision and other fields.

3、 Advantages and characteristics
PM9A3 M.2 22110 NVMe Solid-state drive has many advantages and characteristics, such as:
1. High performance:
PM9A3 M.2 22110 NVMe Solid-state drive adopts PCIe Gen4 interface, supports NVMe SSDs with multiple namespaces, and can achieve read and write speeds of up to 7000MB/s and 5000MB/s, and IOPS performance of 1 million and 1.9 million, which can meet the requirements for storage speed and low latency.
2. Stability:
The Solid-state drive adopts V-NAND 3bit MLC flash memory independently developed by Samsung, which has durability up to 1200TBW and dynamic fault protection of ADE technology, and can ensure long-term stable operation.
3. Energy saving:
PM9A3 M.2 22110 NVMe Solid-state drive has excellent energy consumption control and temperature management functions, which can reduce the energy consumption and temperature of equipment, and improve the reliability and service life of equipment.
4. Manage multiple namespaces:
NVMe SSDs with multiple namespaces can realize multiple virtual disks in a single Solid-state drive, improving storage flexibility and operability.
5. Easy to install:
M. 2 22110 NVMe Solid-state drive adopts M.2 interface, with compact size and simple installation process, which is convenient for users to install by themselves.

4、 Summary
PM9A3 M.2 22110 NVMe Solid-state drive is a storage solution suitable for high-speed, efficient and high reliability. It uses PCIe Gen4 interface and Samsung's self-developed V-NAND technology, has excellent read/write speed and IOPS performance, and can meet a variety of application scenarios and needs. It is an ideal choice for High-performance computing and data acceleration, and has a broad application prospect in data center, cloud computing, artificial intelligence, virtualization, High-performance computing and other fields.
Specification Details
Brand Samsung
Model MZ1L21T9HCLS-00A07
Series PM9A3
Capacity 1.92TB
Form Factor M.2 22110
Interface Type PCIe Gen4 x4 NVMe
Random Read Speed Up to 1,000,000 IOPS
Random Write Speed Up to 1,000,000 IOPS
Sequential Read Speed Up to 6,500 MB/s
Sequential Write Speed Up to 3,200 MB/s
NAND Flash TLC
DRAM Cache 2GB LPDDR4
Endurance TBW 3,840
Warranty Five years
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