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Back Home Product Center Solid State Drive (SSD) M.2
  • Samsung, MZ1LB1T9HALS-00007, PM983, 1.92GB, M.2 22110, NVME Solid-state drive
  • Samsung, MZ1LB1T9HALS-00007, PM983, 1.92GB, M.2 22110, NVME Solid-state drive

MZ1LB1T9HALS-00007

Samsung MZ1LB1T9HALS-00007 PM983 1.92GB M.2 22110 NVME Solid-state drive SSD
Key Features
Samsung SSD PM983 (M.2) is a high-performance Solid-state drive launched by Samsung. It uses 3D V-NAND technology and NVMe (non-volatile memory expression) interface, and has the advantages of high performance, high reliability, high-speed reading and writing. It is an ideal choice for enterprise data centers, cloud computing, and Big data applications.

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Samsung SSD PM983 (M.2) is a high-end enterprise level M.2 Solid-state drive. It uses Samsung V-NAND 3-bit MLC NAND flash memory technology, providing extremely high performance and reliability, and is suitable for data center, cloud computing, virtualization, High-performance computing and other applications requiring high performance and reliability.

The Samsung SSD PM983 (M.2) adopts a PCIe Gen 3.0 x4 interface, built-in high-performance Samsung master, and adopts LPDDR4 caching technology, providing low latency and high throughput data transmission speed. Its maximum read/write performance can reach 3.3GB/s and 3.2GB/s, and the peak value of random read/write IOPS can reach 800000/150000. Compared with traditional SATA Solid-state drive and mechanical disk, its performance has been improved several times.

In addition, Samsung SSD PM983 (M.2) also uses a number of technologies to improve its reliability and data security, including dynamic write caching technology, which improves the write performance and Data integrity; Data protection technology improves data reliability and security; And comprehensive self-monitoring and self-healing functions have improved the stability and durability of the hard drive.

The main advantages of Samsung SSD PM983 (M.2) are:
1. High performance: Adopting PCIe 3.0 x4 interface and NVMe 1.3 protocol, it has a read speed of up to 3.5GB/s and a write speed of 2.7GB/s, while providing up to 480000 IOPS, which can greatly improve the data transmission and access capabilities of the data center.

2. High capacity: Supports storage of different capacities such as 960GB, 1.92TB, 3.84TB, and 7.68TB, meeting the storage needs of various data centers and enterprise applications.

3. Low latency: Equipped with Samsung's proprietary V-NAND flash memory and low latency controller, it can achieve low latency read and write operations, greatly improving the response speed and performance of the application system.

4. High reliability: Supports hardware encryption and end-to-end protection to ensure data security; Adopting Samsung's self-developed small particle V-NAND technology, the flash memory has a longer lifespan and higher data retention reliability and stability.

5. Low power consumption: Adopting the NVMe 1.3 protocol, it has the advantage of low power consumption and can bring higher performance and efficiency to enterprise level applications.
参数 数值
容量 1.92TB
接口 PCI Express Gen 3.0 x4, NVMe 1.2
闪存类型 三星 3D TLC NAND
顺序读速度 最高3,000 MB/s
顺序写速度 最高2,050 MB/s
随机读速度 最高560,000 IOPS
随机写速度 最高100,000 IOPS
功耗 最大 5W
MTBF(平均故障间隔时间) 2,000,000 小时
保修期限 3 年
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