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Back Home Product Center Memory Module or RAM (Random Access Memory) RDIMM
  • Samsung DDR4 memory module, M393A8G40AB2-CWE, 64GB, RDIMM, 3200Mbps, two-way implementation, low voltage, High-performance computing, server application
  • Samsung DDR4 memory module, M393A8G40AB2-CWE, 64GB, RDIMM, 3200Mbps, two-way implementation, low voltage, High-performance computing, server application

M393A8G40AB2-CWE

M393A8G40AB2-CWE, Samsung DDR4, RDIMM, 64GB, 2Rx43200Mbps, 1.2V, 288 (4Gx4) x36
Key Features
M393A8G40AB2-CWE is a Samsung DDR4 memory module with a large capacity of 64GB, suitable for High-performance computing and server applications.
The memory module adopts the RDIMM (Registered DIMM) architecture, which has higher stability and fault tolerance and can handle more memory requests simultaneously.
2Rx4 indicates that the memory module is implemented in dual channels, and each DRAM chip uses two data lines for data reading and writing, enabling faster data transmission.
The high frequency of 3200Mbps enables memory modules to respond faster to computer read and write requests, improving the overall running speed of the computer.
The low voltage characteristic of 1.2V enables memory modules to be more energy-efficient, reduce overall power consumption and heat generation, and is also suitable for applications that require low voltage.
The memory module adopts a design of 288 pins, a 4Gx4 storage structure (i.e. each DRAM chip has a capacity of 4GB), and has 36 banks, which has higher storage density and can also support larger memory capacity.

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M393A8G40AB2-CWE is a high-performance Samsung DDR4 memory module. It has a good capacity and adopts RDIMM technology with the addition of cache register counters, thereby improving the stability and data reliability of the system. The 64GB capacity is sufficient for most High-performance computing and server application scenarios. The dual implementation of 2Rx4 technology provides more stable memory transfer and relatively short memory response time, which can greatly shorten program runtime.
The memory adopts a high-speed transmission rate of 3200Mbps, which enables fast processing of large amounts of data during data transmission, thereby improving the overall running speed of the computer. At the same time, the 1.2V low-voltage technology allows the computer to better save energy and reduce the overall power consumption of the system.
Adopting a design of 288 pins and a 4Gx4 storage structure with 36 Milky Way galaxies, the higher storage density can better meet the needs of large-scale data storage. Moreover, each galaxy (bank) can work independently, which can improve memory read and write efficiency when processing multiple tasks.
Specification Details
Model M393A8G40AB2-CWE
Capacity 64GB
Architecture RDIMM
Transmission Speed 3200Mbps
Voltage 1.2V
Memory Type DDR4
Storage Structure 2Rx4
Interface Type 288 pins
Number of Storage Components 36
Storage Density 4Gx4
Memory Color Green
Working Temperature 0°C~85°C
Working Current Maximum value: 1.99A
Support for Autonomy (ECC) Support (8-bit/word)
Lifespan 1 million hours (standard conditions)
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