M393A8G40AB2-CWE
M393A8G40AB2-CWE, Samsung DDR4, RDIMM, 64GB, 2Rx43200Mbps, 1.2V, 288 (4Gx4) x36
Key Features
M393A8G40AB2-CWE is a Samsung DDR4 memory module with a large capacity of 64GB, suitable for High-performance computing and server applications.
The memory module adopts the RDIMM (Registered DIMM) architecture, which has higher stability and fault tolerance and can handle more memory requests simultaneously.
2Rx4 indicates that the memory module is implemented in dual channels, and each DRAM chip uses two data lines for data reading and writing, enabling faster data transmission.
The high frequency of 3200Mbps enables memory modules to respond faster to computer read and write requests, improving the overall running speed of the computer.
The low voltage characteristic of 1.2V enables memory modules to be more energy-efficient, reduce overall power consumption and heat generation, and is also suitable for applications that require low voltage.
The memory module adopts a design of 288 pins, a 4Gx4 storage structure (i.e. each DRAM chip has a capacity of 4GB), and has 36 banks, which has higher storage density and can also support larger memory capacity.
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